Semiconductor integrated circuit device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S296000, C257S310000, C257S533000, C257S534000, C257S535000, C438S393000, C438S394000, C438S395000, C438S396000

Reexamination Certificate

active

06876059

ABSTRACT:
A semiconductor integrated circuit device according to an embodiment of the present invention has an MIM structure capacitor connected between a power source potential electrode wiring and a ground potential electrode wiring each via at least one interlayer connection wiring.

REFERENCES:
patent: 5194932 (1993-03-01), Kurisu
patent: 5614743 (1997-03-01), Mochizuki
patent: 6147857 (2000-11-01), Worley et al.
patent: 6285050 (2001-09-01), Emma et al.
patent: 6646860 (2003-11-01), Takaramoto et al.
patent: 8-274258 (1996-10-01), None
patent: 2001-102529 (2001-04-01), None

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