Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-26
2005-04-26
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S050000, C438S052000, C438S459000, C438S709000, C438S712000, C438S719000, C438S974000, C438S977000
Reexamination Certificate
active
06884732
ABSTRACT:
A method of fabricating a device having a desired non-planar surface or profile and device produced thereby are provided. A silicon wafer is first coated with silicon nitride, patterned, and DRIE to obtain the desired etch profile. Silicon pillars between trenches are then etched using an isotropic wet etch, resulting in a curved well. The wafer is then oxidized to −2 μm to smooth the surface of the well, and to protect the well from an ensuing planarization process. The nitride is then selectively removed, and the wafer surface is planarized by removing the Si left in the field regions using either a maskless DRIE or CMP. Finally, the oxide is etched away to produce a wafer with a curved surface.
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Najafi Khalil
Tsung-Kuan Chou
Brooks & Kushman P.C.
Louie Wai-Sing
Pham Long
The Regents of the University of Michigan
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