Structure having pores and its manufacturing method

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C257S014000, C257S028000, C438S022000, C438S268000, C438S746000

Reexamination Certificate

active

06914008

ABSTRACT:
A structure having pores includes a first layer containing alumina, a second layer that includes at least one of Ti, Zr, Hf, Nb, Ta, Mo, W and Si, and a third layer with electrical conductivity, in this order, wherein the first and second layers have pores.

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