Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-07-05
2005-07-05
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257S014000, C257S028000, C438S022000, C438S268000, C438S746000
Reexamination Certificate
active
06914008
ABSTRACT:
A structure having pores includes a first layer containing alumina, a second layer that includes at least one of Ti, Zr, Hf, Nb, Ta, Mo, W and Si, and a third layer with electrical conductivity, in this order, wherein the first and second layers have pores.
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Den Toru
Saito Tatsuya
Yasui Nobuhiro
Nelms David
Nguyen Dao H.
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