High-density finFET integration scheme

Details High-density finFET integration scheme High-density finFET integration scheme

2005-05-17

2005-05-17

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S192000, C257S308000, C257S798000

Reexamination Certificate

active

06894326

ABSTRACT:
The invention provides a method of manufacturing a fin-type field effect transistor (FinFET) that forms a unique FinFET that has a first fin with a central channel region and source and drain regions adjacent the channel region, a gate intersecting the first fin and covering the channel region, and a second fin having only a channel region.

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