Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2005-09-06
2005-09-06
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S351000, C257S369000, C257S903000
Reexamination Certificate
active
06940106
ABSTRACT:
First and second MOS transistors are formed in first and second active areas, respectively, and their gates are configured from a first gate electrode in the first and second transistors. Third and fourth MOS transistors are formed in the second and a third active areas, respectively, and their gates are configured from second and third gate electrodes in the third and fourth transistors. Fifth and sixth MOS transistors are formed in a fourth active area, and their gates are configured from the third and fourth gate electrodes in the fifth and sixth transistors. An end portion of the first gate electrode projecting from the first active area is obliquely arranged relative to a gate width direction of the first transistor, and an end portion of the third gate electrode projecting from the third active area is obliquely arranged relative to a gate width direction of the fourth transistor.
REFERENCES:
patent: 5698893 (1997-12-01), Perera et al.
patent: 5795800 (1998-08-01), Chan et al.
patent: 5886388 (1999-03-01), Wada et al.
patent: 5930163 (1999-07-01), Hara et al.
patent: 6015996 (2000-01-01), Lee
patent: 6791200 (2004-09-01), Nii
patent: 10-178110 (1998-06-01), None
Frommer & Lawrence & Haug LLP
Kabushiki Kaisha Toshiba
Smoot Stephen W.
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