Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-05-31
2005-05-31
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010, C372S045013, C372S046012, C372S096000
Reexamination Certificate
active
06901096
ABSTRACT:
Distributed Bragg reflectors (DBRs), and VCSELs that use such DBRs, comprised of AlP layers on InP substrates. When grown on an InP substrate, if the critical layer thickness (tcrt) of AlP is greater than λ/4nAlP, where nAlPis the index of refraction of InP and λ is the wavelength, then the DBR can be grown using alternating layers of InP and AlP, wherein the thickness of the AlP is less than the critical thickness. If the critical layer thickness (tcrt) of AlP is greater than λ/4nAlP, then the DBR mirror is grown using alternating layers of InP and of an AlP/InP superlattice, wherein the AlP/InP superlattice is comprised of InP and of AlP wherein the thickness of the AlP is less than the critical thickness.
REFERENCES:
patent: 5929461 (1999-07-01), Yamaguchi et al.
patent: 6347108 (2002-02-01), Jiang et al.
patent: 6366597 (2002-04-01), Yuen et al.
patent: 6546031 (2003-04-01), Jewell et al.
patent: 6549556 (2003-04-01), Hwang et al.
patent: 6553048 (2003-04-01), Jiang et al.
patent: 6556610 (2003-04-01), Jiang et al.
patent: 6583033 (2003-06-01), Hall et al.
patent: 6785311 (2004-08-01), Najda
Harvey Minsun Oh
Nguyen Dung
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