Method for producing bonded wafer and bonded wafer

Details Method for producing bonded wafer and bonded wafer Method for producing bonded wafer and bonded wafer

2005-05-31

2005-05-31

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S548000, C438S459000, C438S456000, C438S457000, C438S974000, C438S977000

Reexamination Certificate

active

06900113

ABSTRACT:
The present invention provides a method for producing a bonded wafer comprising at least an ion implantation process where at least either hydrogen ions or rare gas ions are implanted into a first wafer from its surface to form a micro bubble layer (implanted layer) in the first wafer, a bonding process where the surface subjected to the ion implantation of the first wafer is bonded to a surface of a second wafer, and a delamination process where the first wafer is delaminated at the micro bubble layer, wherein the ion implantation process is performed in divided multiple steps, and a bonded wafer. Thus, there are provided a method for producing a bonded wafer, which is for reducing micro-voids generated in the ion implantation and delamination method and a bonded wafer free from micro-voids.

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