Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2005-03-01
2005-03-01
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S007000, C117S008000, C117S010000, C117S944000
Reexamination Certificate
active
06860938
ABSTRACT:
The present invention provides a method by which an oxide material having excellent thermoelectric conversion performance can be produced by a simple process. Specifically, the present invention provides a method for producing a composite oxide single crystal in which a mixture of raw substances including a Bi-containing substance, a Sr-containing substance, a Ca-containing substance, a Co-containing substance and a Te-containing substance, or a mixture of raw substances also including a Pb-containing substance in addition to the above-mentioned substances, is heated in an oxygen-containing atmosphere at a temperature below the melting point of any of the raw substances. The composite oxide single crystal produced by the method of the present invention is a ribbon-shaped fibrous single crystal that is about 10 to 10,000 μm long, about 20 to 200 μm wide, and about 1 to 5 μm thick. According to the method of the present invention, a composite oxide single crystal with excellent thermoelectric conversion performance can be produced simply by heating a mixture of raw substances at a relatively low temperature, below the melting point of any of the raw substances, meaning that a relatively easy and safe heat treatment operation can be performed, which contributes to cost reduction.
REFERENCES:
patent: 5016563 (1991-05-01), Murakami et al.
patent: 6074477 (2000-06-01), Imaeda et al.
patent: 6759587 (2004-07-01), Toshima et al.
patent: 1 174 933 (2002-01-01), None
patent: 2001-019544 (2001-01-01), None
patent: 2001-064021 (2001-03-01), None
patent: 2002-100814 (2002-04-01), None
Ryoji Funahashi, et al., “An Oxide Single Crystal with High Thermoelectric Performance in Air,” Japanese Journal of Applied Physics, vol. 39, No. 11B, pp. 1127-1129 Nov. 15, 2000.
Funahashi Ryoji
Matsubara Ichiro
Shikano Masahiro
Knobbe Martens Olson & Bear LLP
Kunemund Robert
National Institute of Advanced Technology
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