Chip scale image sensor package

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S778000, C257S784000, C257S780000, C257S432000, C257S433000, C257S434000

Reexamination Certificate

active

06917090

ABSTRACT:
A semiconductor package includes a substrate, and a semiconductor die flip chip mounted to the substrate. The package also includes substrate circuitry on a circuit side of the substrate, die circuitry on a back side of the die, terminal contacts on the die circuitry, bonded connections between the substrate circuitry and the die circuitry, and an encapsulant on the bonded connections and edges of the die. The die can include an image sensor on the circuit side configured to receive electromagnetic radiation transmitted through the substrate. A method for fabricating the package includes the step of providing a wafer with multiple dice, forming the die circuitry on the dice, and singulating the wafer into individual dice. The method also includes the steps of providing a substrate panel with multiple substrates, forming the substrate circuitry on the substrates, flip chip bonding the dice to the substrates, forming bonded connections between the dice and the substrates, forming the terminal contacts on the die circuitry, and singulating the panel into separate components.

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