Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-09-13
2005-09-13
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S050000, C117S094000, C117S095000, C117S101000, C117S102000, C117S104000
Reexamination Certificate
active
06942731
ABSTRACT:
The invention relates to a method for improving the efficiency of epitaxially grown quantum dot semiconductor components having at least one quantum dot layer. The efficiency of semiconductor components containing an active medium consisting of quantum dots is often significantly below the theoretically possible values. The inventive method enables the efficiency of the relevant component to be clearly increased without substantially changing the growth parameters of the various epitaxial layers. In order to improve the efficiency of the component, the crystal is morphologically changed when the growth of the component is interrupted at the point in the overall process at which the quantum dots of a layer have just been covered. The growth front is smoothed at the same time, leading to, for example, a reduction in waveguide loss as the thickness of the waveguide is more homogeneous if the relevant component has one such waveguide. Simultaneously, smoothing the growth front enables the quantum dot layers to be stacked closer together than before, thereby increasing the volume filling factor. The modal gain is thus increased, for example for lasers or amplifiers.
REFERENCES:
patent: 5244828 (1993-09-01), Okada et al.
patent: 5614435 (1997-03-01), Krishnamurhty et al.
patent: 5643828 (1997-07-01), Ugajin et al.
patent: 6242326 (2001-06-01), Ro et al.
patent: 6372536 (2002-04-01), Fischer et al.
patent: 198 19 259 (1999-11-01), None
patent: WO 90 03659 (1990-04-01), None
patent: WO 01 17035 (2001-03-01), None
R.L. Sellin, et al., Close-to-ideal device characteristics of high-power InGaAs/GaAs quantom dot lasers, Applied Physics Letters, vol. 78, No. 9, Feb. 26, 2001, pp 1207-1209, © 2001 American Institute of Physics, http://ojps.alp.org/aplo/aplcpyrts.html.
Y. Arakawa, et al., Multidimensional quantum well laser and temperature dependence of its threshold current, Applied Physics Letters, vol. 40, No. 11, Jun. 1, 1982, pp 939-941, © 1982 American Institute of Physics, http://apl.aip.org/apl/copyright.jsp.
Masahiro Asada, et al., Gain and the Threshold of Three-Dimensional Quantum-Box Lasers, IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, Sep. 1986, pp 1915-1921, © 1986 IEEE.
Yasuyuki Miyamaoto, et al., Light Emission from Quantum-Box Structure by Current Injection, Japanese Journal of Applied Physics, vol. 26, No. 4, Apr. 1987, pp. L225-L227.
F. Heinrichsdorff, et al., Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots, Journal of Crystal Growth 195 (1998), pp 540-545, © 1998 Elsevier Science B.V.
Marius Grundmann, et al., Progress in Quantum Dot Lasers; 1100 nm, 1300 nm, and High Power Applications, Japanese Journal of Applied Physics, vol. 39 (2000), pp 2341-2343, Part 1, No. 4B, Apr. 2000, © 2000 The Japan Society of Applied Physics.
Marius Grundmann, The present status of quantum dot lasers, Physica E. 5 (2000), pp 167-184, © 2000 Elsevier Science B.V., www.elsevier.nl/locate/physe.
C.V. Reddy, et al., Nature of the bulk defects in GaAs through high-temperature quenching studies, Physical Review B, vol. 54, No. 16, Oct. 15, 1996-II, © 1996 The American Physical Society, pp. 11290-11297.
V.A. Shchukin, et al., Spontaneous Ordering of Arrays of Coherent Strained Islands, Physical Review Letters, vol. 75, No. 16, pp 2968-2971, Oct. 16, 1995, © 1995 The American Physical Society.
N.N. Ledentsov, et al., Ordered Arrays of the Quantum Dots: Formation Electronic Spectra, Relaxation Phenomena, Lasing, Solid-State Electronics, vol. 40, Nos. 1-8, pp 785-798, 1996, Copyright © 1996 Elsevier Science Ltd., Printed in Great Britain.
N. N. Ledentsov, et al., 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition, Semicond. Sci. Technol. 15, (2000), pp 604-607, Printed in the UK, © IOP Publishing Ltd.
F. Heinrichsdorff, et al., High-power quantum-dot lasers at 1100 nm, Applied Physics Letters, vol. 76, No. 5, pp 556-558, Jan. 31, 2000, © 2000 American Institute of Physics.
M. M. Sobolev, et al., Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands, Semiconductors, vol. 34, No. 2, 2000, pp 195-204, Translated from Fizika i Tekhnika Poluprovodnikov, vol. 34, No. 2, 2000, pp 200-210, Original Russian Text Copyright © 2000 by Sobolev, Kochnev, Lantratov, Bert, Cherkashin, Ledentsov, Bedarev.
Bimberg Dieter
Ledenstov Nikolai N.
Sellin Roman
Kunemund Robert
Rothwell Figg Ernst & Manbeck P.C.
Technische Universitaet Berlin
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