Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2005-03-15
2005-03-15
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C438S048000
Reexamination Certificate
active
06867444
ABSTRACT:
A semiconductor substrate incorporating a neutron conversion layer (such as boron-10) that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductive device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer. In such a case, a trench neutron conversion layer is formed in at least one of the trenches to improve device sensitivity.
REFERENCES:
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Hunnius Stephen T.
Karasek John J.
Lee Eddie
Owens Douglas W.
The United States of America as represented by the Secretary of
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