Semiconductor switching circuit device

Details Semiconductor switching circuit device Semiconductor switching circuit device

2005-05-10

2005-05-10

Tran, Michael (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C333S204000, C333S219000, C358S296000

Reexamination Certificate

active

06891267

ABSTRACT:
A semiconductor switching circuit device includes a field effect transistor having a source electrode, a gate electrode and a drain electrode, a first electrode pad connected to the source electrode or the drain electrode, and a second electrode pad connected to the source electrode or the drain electrode which is not connected to the first electrode pad. The device also includes a third electrode pad receiving a DC voltage and applying the DC voltage to the field effect transistor, a first insulating layer covering the field effect transistor, a metal layer disposed above the first insulating layer and connected to the third electrode pad, and a second insulating layer disposed on the metal layer. The third electrode pad may be a control terminal pad, a ground terminal pad or a terminal pad receiving a constant DC power voltage. The metal layer may be a flat sheet, a lattice or a comb-like structure.

REFERENCES:
patent: 4407010 (1983-09-01), Baji et al.
patent: 5142255 (1992-08-01), Chang et al.
patent: 5262871 (1993-11-01), Wilder et al.
patent: 6577374 (2003-06-01), Nakata et al.

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