Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-05-03

2005-05-03

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S422000, C438S619000

Reexamination Certificate

active

06887766

ABSTRACT:
A semiconductor device having an interlayer insulation film with a low capacitance and a method of fabricating the same are disclosed. An example semiconductor device having a multi-layered metal wire structure includes first and second interlayer insulation films provided between lower metal wire layers and upper metal wire layers. The example semiconductor device also includes air gaps formed in the first interlayer insulation film at an interlevel between the upper and lower metal wire layers and via holes connecting the upper and lower metal wire layers.

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