Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-09-06
2005-09-06
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S365000, C257S077000, C257S288000, C257S613000
Reexamination Certificate
active
06940096
ABSTRACT:
A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous as a heat spreader.
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patent: 2003/0203615 (2003-10-01), Denning et al.
Intel Corporation
Pham Thanh V.
Trop Pruner & Hu P.C.
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