Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-01-04
2005-01-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S127000, C257S170000, C257S409000, C257S452000, C257S484000, C257S605000, C257S760000
Reexamination Certificate
active
06838771
ABSTRACT:
As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
REFERENCES:
patent: 6124216 (2000-09-01), Ko et al.
patent: 6316351 (2001-11-01), Chen et al.
patent: 6383913 (2002-05-01), Tsai et al.
patent: 6407011 (2002-06-01), Ikeda et al.
patent: 6559548 (2003-05-01), Matsunaga et al.
patent: 6670710 (2003-12-01), Matsunaga
patent: 2-217198 (1990-08-01), None
patent: 2000-340569 (2000-12-01), None
patent: 2001-274239 (2001-10-01), None
International Technology Roadmap for Semiconductors, 1999 Edition, pp. 163-166.
Hotta Katsuhiko
Ogata Kiyoshi
Otani Miharu
Suzuki Yasumichi
Tanaka Jun
Huynh Andy
Mattingly Stanger & Malur, P.C.
Nelms David
Renesas Technology Corp.
LandOfFree
Semiconductor device having conductor layers stacked on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having conductor layers stacked on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having conductor layers stacked on a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3390250