Strained silicon MOSFETs having improved thermal dissipation

Details Strained silicon MOSFETs having improved thermal dissipation Strained silicon MOSFETs having improved thermal dissipation

2005-05-31

2005-05-31

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C257S347000, C257S348000, C257S349000

Reexamination Certificate

active

06900143

ABSTRACT:
The thermal conductivity of strained silicon MOSFETs and strained silicon SOI MOSFETs is improved by providing a silicon germanium carbide thermal dissipation layer beneath a silicon germanium layer on which strained silicon is grown. The silicon germanium carbide thermal dissipation layer has a higher thermal conductivity than silicon germanium, thus providing more efficient removal of thermal energy generated in active regions.

REFERENCES:
patent: 4495262 (1985-01-01), Matsuzaki et al.
patent: 4882252 (1989-11-01), Kawamura et al.
patent: 5434094 (1995-07-01), Kobiki et al.
patent: 6639249 (2003-10-01), Valliath

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