Integrated semiconductor device with an insulated-gate field eff

Details Integrated semiconductor device with an insulated-gate field eff Integrated semiconductor device with an insulated-gate field eff

1990-01-19

1992-07-14

Carroll, J.

357 4, 357 13, 357 16, H01L 2712, H01L 2990, H01L 29161, H01L 2980

Patent

active

051307634

ABSTRACT:
An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level, has a drain-source current characteristic as a function of the gate-source voltage which exhibits a negative transconductance zone beyond a maximum, the slopes of the characteristic on both sides thereof being substantially symmetrical so that two values of the gate-source voltage which are symmetrical with respect to said maximum correspond substantially to the same value of the drain source current, and in that the transistor comprises biasing means ensuring that its operating zone is situated in the region of said characteristic around said maximum.

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