Nonvolatile semiconductor memory device storing two-bit...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185030, C365S185180

Reexamination Certificate

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06950343

ABSTRACT:
A nonvolatile semiconductor memory device includes a memory cell transistor which is configured to store two bits inclusive of a first bit and a second bit at respective ends of an electric charge capturing film, a comparator which checks a data status by reading data of the first bit, and a potential switching circuit which changes potential conditions for writing of the second bit in response to whether the data status is 0 or 1.

REFERENCES:
patent: 6011725 (2000-01-01), Eitan
patent: 6172905 (2001-01-01), White et al.
patent: 6628546 (2003-09-01), Ogura et al.
patent: 6670669 (2003-12-01), Kawamura
patent: 2001-57093 (2001-02-01), None
patent: 2001-118390 (2001-04-01), None
International Publication No. WO 01/13378, published Feb. 22, 2001.

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