Semiconductor device

Details Semiconductor device Semiconductor device

2005-07-05

2005-07-05

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

C257S691000, C257S723000, C257S720000, C257S718000, C257S502000

Reexamination Certificate

active

06914321

ABSTRACT:
It is an object to provide a semiconductor device having an improved heat dissipation characteristic. A power element is mounted on and jointed and to a metal block through a jointing material. An insulating substrate includes a ceramic substrate and metal layers formed on both surfaces of the ceramic substrate and having thicknesses equal to each other. The metal block and the insulating substrate are provided per insulation unit of the power element. The metal layer of the insulating substrate is joined to a surface of the metal block through a jointing material opposite to a surface thereof for forming the power element. An electrode terminal is attached to a surface of the metal block having a power element joined thereto through ultrasonic junction and the like. Electrode terminals are connected to electrodes of the power element through aluminum wires. The power element, the electrode terminals and the metal block are sealed with a resin package while the metal layer of the insulating substrate remains exposed. An external heat dissipator is attached to the exposed metal layer of the insulating substrate.

REFERENCES:
patent: 4012832 (1977-03-01), Crane
patent: 4910584 (1990-03-01), Mizuo
patent: 4920405 (1990-04-01), Itoh et al.
patent: 5291065 (1994-03-01), Arai et al.
patent: 5311057 (1994-05-01), McShane
patent: 5317194 (1994-05-01), Sako
patent: 5371403 (1994-12-01), Huang et al.
patent: 5379187 (1995-01-01), Lee et al.
patent: 5440169 (1995-08-01), Tomita et al.
patent: 5455457 (1995-10-01), Kurokawa
patent: 5488256 (1996-01-01), Tsunoda
patent: 5559374 (1996-09-01), Ohta et al.
patent: 5621243 (1997-04-01), Baba et al.
patent: 5767573 (1998-06-01), Noda et al.
patent: 5783466 (1998-07-01), Takahashi et al.
patent: 5942797 (1999-08-01), Terasawa
patent: 6060772 (2000-05-01), Sugawara et al.
patent: 6297549 (2001-10-01), Hiyoshi
patent: 44 00 341 (1994-07-01), None
patent: 196 25 240 (1997-04-01), None
patent: 199 08 749 (2000-08-01), None
patent: 0 650 193 (1995-04-01), None
patent: 9-213877 (1997-08-01), None
patent: 10-93015 (1998-04-01), None
patent: 10-093015 (1998-04-01), None
patent: 11-204700 (1999-07-01), None
patent: 2001-118961 (2001-04-01), None

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