Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2005-03-22
2005-03-22
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Having organic semiconductive component
C257S040000
Reexamination Certificate
active
06869821
ABSTRACT:
A deposited dielectric (e.g., PECVD silicon nitride) formed on an inexpensive glass or plastic foil substrate is modified to facilitate the formation of high mobility organic semiconductor films. In one embodiment, the dielectric is plasma treated using nitrogen or argon gas to reduce the surface roughness of the dielectric layer below 5 nm (peak-to-valley). An organic semiconductor film (e.g., pentacene) grown on the modified dielectric exhibits high mobility and large polycrystalline grain sizes.
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Knipp Dietmar P.
Northrup John E.
Street Robert A.
Bever Patrick T.
Bever Hoffman & Harms
Kielin Erik
Xerox Corporation
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