System and method for reducing trapped charge effects in a...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C250S2140RC

Reexamination Certificate

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06914230

ABSTRACT:
A system and method for reducing image lag in a complementary metal oxide semiconductor (CMOS) photodetector is disclosed. In one embodiment, the invention is a a method for reducing image lag in an array of complementary metal oxide semiconductor (CMOS) photodetectors by forward biasing the photodetectors during a first time period to charge charge traps in the photodetectors, and reverse biasing the photodetectors during a second time period to remove charge from the photodetectors except the charge trapped in the charge traps.

REFERENCES:
patent: 3727076 (1973-04-01), Mar

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