SOI MOSFET junction degradation using multiple buried...

Details SOI MOSFET junction degradation using multiple buried... SOI MOSFET junction degradation using multiple buried...

2005-03-08

2005-03-08

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With switching speed enhancement means

C257S446000, C257S461000, C438S048000, C438S162000, C438S164000, C438S166000, C438S174000, C438S186000

Reexamination Certificate

active

06864516

ABSTRACT:
Various circuit devices incorporating junction-traversing dislocation regions and methods of making the same are provided. In one aspect, a method of processing is provided that includes forming an impurity region in a device region of a semiconductor-on-insulator substrate. The impurity region defines a junction. A dislocation region is formed in the device region that traverses the junction. The dislocation region provides a pathway to neutralize charge lingering in a floating body of a device.

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Stanley Wolf and Richard N. Tauber;Silicon Processing for the VLSI Era, vol. 2—Process Integration; 1990; pp. 298-299.

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