Structure for shallow junction MOS circuits

Details Structure for shallow junction MOS circuits Structure for shallow junction MOS circuits

Filed on

1979-07-30

Date issued

1981-09-22

Examiner

James, Andrew J.

Other Related Categories

357 59, 357 65, 357 68, 357 71, H01L 2978, H01L 2904, H01L 2348

Type

Patent

Status

active

Patent number

042913225

Description

ABSTRACT:
A contact structure and method of fabrication for achieving shallow junction MOS integrated circuits. An insulator (23) such as phosphosilicate glass is deposited over the circuit and contact windows (24 and 25) opened therein. Fire polishing of the glass is eliminated so that the junctions can be made shallow and the sides of the windows remain steep. A layer of polycrystalline silicon (26) is deposited over the insulator and the contact windows so as to conformally coat the sides of the windows and the exposed semiconductor. A contact metal (28 and 29), such as aluminum, is deposited over the polycrystalline silicon. The metal tends to be essentially discontinuous over the steep sides of the windows, but the polycrystalline silicon layer has sufficiently low resistivity to provide adequate conduction in these areas.

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patent: 4042953 (1977-08-01), Hall
patent: 4124934 (1978-11-01), Debrebisson
patent: 4134125 (1979-01-01), Adams et al.
patent: 4136434 (1979-01-01), Thibault et al.
patent: 4141023 (1979-02-01), Yamada
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4207586 (1980-06-01), Lebailly
patent: 4220961 (1980-09-01), Werner

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