Semiconductor photo-detector, semiconductor photodetection...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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Details

C257S432000, C257S446000, C257S499000, C385S049000, C385S051000

Reexamination Certificate

active

06917032

ABSTRACT:
A semiconductor photodetection device includes a light incident facet for receiving light from an optical waveguide. Light received at the light incident facet is refracted through a photo-absorption layer to register photonic events. A material may be introduced between the optical waveguide and the light incident facet to improve responsiveness of the device. The light incident facet may be at an angle to the direction of the light emitted from the optical waveguide to cause the incident light to be refracted through several layers of the semiconductor photodetection device.

REFERENCES:
patent: 4784452 (1988-11-01), Hodge et al.
patent: 6770945 (2004-08-01), Fukano

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