Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-04-05
2005-04-05
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S667000, C438S928000
Reexamination Certificate
active
06875672
ABSTRACT:
A method for manufacturing a semiconductor device can prevent defective products resulting from a plating liquid when surfaces of protruded portions of penetration electrodes are subjected to plating. An organic insulation film (14) is formed on one surface of a substrate proper (10), and a support member (16) is adhered to the organic insulation film (adhesion step). A rear side of the substrate proper is removed until protruded portions (6) of penetration electrodes (7) are exposed, thereby to form a semiconductor substrate (5). Plating films (8) are formed on the surfaces of the protruded portions (6), and the support member and the organic insulation film are removed from the semiconductor substrate. The organic insulation film has an adhesive property and chemical resistance to chemical substances used in respective steps after the adhesion step, and it is at least dissolved in or peeled off from a chemical substance used in the removal step.
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Fujii Tomonori
Nemoto Yoshihiko
Sato Tomotoshi
Sunohara Masahiro
Sharp Kabushiki Kaisha
Shinko Electric Industries Co. Ltd.
Smoot Stephen W.
Taiyo Yuden Co. Ltd.
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