Combined single-frequency laser and linear amplifier

Details Combined single-frequency laser and linear amplifier Combined single-frequency laser and linear amplifier

2005-01-04

2005-01-04

Wong, Don (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010, C372S045013, C372S075000

Reexamination Certificate

active

06839371

ABSTRACT:
A semiconductor laser device includes a substrate having on a surface thereof a semiconductor diode laser portion and a linear amplifier portion. Each of the laser portion and amplifier portion has a waveguide layer with the waveguide layers being in alignment. The laser portion is of a structure which permits it to generate radiation and emit the radiation from one end. The amplifier has an end that receives the radiation from the laser portion, and another end with emits the radiation after the radiation is amplified. The device emits FM radiation but not IM radiation.

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Nakano, et al., “Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets”, Japanese J. Applied Physics, 29 (12), Dec. 1990, L2430-L2433.
Dutta, et al., “Integrated distributed feedback laser and optical amplifier”, Applied Physics Letters, 59 (14), Sep. 1991, 1676-1677.
Koren, et al., “Intergration of 1.3 μm wavelength lasers and optical amplifiers”, Applied Physics Letter, 57(14), Oct. 1990, 1375-1377.

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