Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-03-08
2005-03-08
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185200, C365S185330
Reexamination Certificate
active
06865110
ABSTRACT:
Provided are a program voltage generation circuit for achieving stable programming of a flash memory cell, and a method of programming a flash memory cell. In the program voltage generation circuit, a program wordline voltage to be applied to the gate of a flash memory cell is generated in response to a sink current provided by a constant current source and the result of a comparison between a reference voltage and a bitline voltage. The bitline voltage is generated according to a program current flowing to the first flash memory cell. A bitline current control voltage is generated in response to the program current that flows to a second flash memory cell in response to the program wordline voltage. Accordingly, even when the characteristics of the flash memory cell vary due to a change of a manufacturing process thereof, a constant program wordline voltage, a constant bitline voltage, and a constant bitline current control voltage are generated, and thus the flash memory cell is stably programmed.
REFERENCES:
patent: 6134141 (2000-10-01), Wong
Mills & Onello LLP
Tran Andrew Q.
LandOfFree
Program voltage generation circuit for stably programming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Program voltage generation circuit for stably programming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Program voltage generation circuit for stably programming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3375140