High precision pattern forming method of manufacturing a...

Details High precision pattern forming method of manufacturing a... High precision pattern forming method of manufacturing a...

2005-01-25

2005-01-25

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S703000, C438S704000, C438S717000, C438S736000

Reexamination Certificate

active

06846750

ABSTRACT:
According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

REFERENCES:
patent: 4434224 (1984-02-01), Yoshikawa et al.
patent: 5185278 (1993-02-01), Barker
patent: 5650041 (1997-07-01), Gotoh et al.
patent: 5976769 (1999-11-01), Chapman
patent: 6251774 (2001-06-01), Harada et al.
patent: 6279585 (2001-08-01), Shiraki et al.
patent: 6-5592 (1994-01-01), None

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