Stock material or miscellaneous articles – All metal or with adjacent metals – Composite; i.e. – plural – adjacent – spatially distinct metal...
Reexamination Certificate
2005-01-18
2005-01-18
Jones, Deborah (Department: 1771)
Stock material or miscellaneous articles
All metal or with adjacent metals
Composite; i.e., plural, adjacent, spatially distinct metal...
C428S620000, C428S555000, C428S700000, C428S701000, C117S946000
Reexamination Certificate
active
06844084
ABSTRACT:
A spinel composition of the invention includes a monocrystalline lattice having a formula Mg1-wαwAlx-yβyOz, where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than about 4 and equal to or less than about 13, α is a divalent cationic element having an ionic radius greater than divalent magnesium, and β is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral and octahedral positions, and most of the magnesium and α occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, α and β can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of a spinel composition. A composite includes the spinel composition layer and a III-V layer at the surface of the spinel layer. A method of forming a composite includes depositing the III-V layer onto the surface of the spinel composition using heteroepitaxial techniques.
REFERENCES:
patent: 3655439 (1972-04-01), Seiter
patent: 3658586 (1972-04-01), Wang
patent: 3796597 (1974-03-01), Porter et al.
patent: 3883313 (1975-05-01), Cullen et al.
patent: 3885978 (1975-05-01), Doi et al.
patent: 4177321 (1979-12-01), Nishizawa
patent: 4627064 (1986-12-01), Auzel et al.
patent: 4963520 (1990-10-01), Yoo et al.
patent: 5138298 (1992-08-01), Shino
patent: 5530267 (1996-06-01), Brandle, Jr. et al.
patent: 5741724 (1998-04-01), Ramdani et al.
patent: 5850410 (1998-12-01), Kuramata
patent: 6023479 (2000-02-01), Thony et al.
patent: 6104529 (2000-08-01), Brandle, Jr. et al.
patent: 20030007520 (2003-01-01), Kokta et al.
patent: 0 263 171 (1992-11-01), None
patent: 0 762 930 (2000-07-01), None
Pinckney, L.R., “Transparent, high strain point spinel glass-ceramics,”Journal of Non-Crystalline Solids,255: 171-177, (1999).
Nakamura, S., “Current Status and Future Prospects of InGaN-Based Laser Diodes,”ISAP International,1: 5-17, (2000).
Kisailus D., and Lange F.F., “Growth of epitaxial GaN on LiGaO2substrates via a reaction with ammonia,”J. Mater. Res.,16(7): 2077-2081, (2001).
Nakamura,S., and Fasol, G., “InGaN MQW LDs Grown on MgA12O4Substrates,” InThe Blue Laser Diode,(NY:Springer-Verlag), pp. 233-243, (1997).
Morkoc, H., et al., “Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies,”J. Appl. Phys.,76(3): 1363-1398, (1994).
Tsuchiya, T., et al., “Epitaxial growth of InN films on MgA12O4(1 1 1) substrates,”J. of Crystal Growth 220: 185-190 (2000).
Efimov, A.N., et al., “On an Unusual Azimuthal Orientation Relationship in the System Gallium Nitride Layer on Spinel Substrate,”Crystallography Reports,45(2):312-317 (2000).
Yang, H.F., et al., “Microstructure evolution of GaN buffer layer on MgA12O4substrate,”J. of Crystal Growth 193: 478-483 (1998).
Ohsato, H., et al., “Epitaxial orientation and a growth model of (0 0 1) GaN thin film on (1 1 1) spinel substrate,”J. of Crystal Growth 189/190:202-207 (1998).
Duan, S., et al., “MOVPE growth of GaN and LED on (1 1 1) MgA12O4, ”J. of Crystal Growth 189/190:197-201 (1998).
Nikishin, S.A., et al., “Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates,”App. Phys. Lett. 72(19):2361-2363 (1998).
Sun, C.J., et al., “Mg-doped green light emitting diodes over cubic (1 1 1) MgA12O4substrates,”App. Phys. Lett. 70(11):1444-1446 (1997).
Efimov, A.N., et al., “Symmetry constraints and epitaxial growth on non-isomorphic substrate,”Thin Solid Films 260:111-117 (1995).
Kruger, M.B., et al., “Equation of state of MgA12O4spinel to 65 GPa,”Physical Review B Condensed Matter, Third Series 56(1):1-4 (1997).
George, T., et al., “Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates,”Appl. Phys. Lett. 68(3):337-339 (1996).
Sun, C.J., et al., “Deposition of high quality wurtzite GaN films over cubic (1 1 1) MgA12O4substrates using low pressure and metalorganic chemical vapor deposition,”Appl. Phys. Lett. 68(8):1129-1131 (1996).
Nakamura, S., et al., “Characteristics of InGaN multi-quantum-well-structure laser diodes,”Appl. Phys. Lett. 68(23):3269-3271 (1996).
Kuramata, A., et al., “Properties of GaN Epitaxial Layer Grown on (1 1 1) MgA12O4Substrate,”Solid-State Electronics 41(2): 251-254 (1997).
Khan, M.A., et al., “Cleaved cavity optically pumped InGaN-GaN laser grown on spinel substrates,”Appl. Phys. Lett. 69(16):2418-2420 (1996).
Gritsyna, V.T., et al., “Structure and Electronic States of Defects in Spinel of Different Compositions MgO.nA12O3:Me,”J. Am. Ceram. Soc. 82(12):3365-3373 (1999).
Temple, A., et al., “Zur Epitaxie von Galliumnitrid auf nichtstöchiometrischem Spinell im System GaC1/NH3/He,”Kristall und Technik 10(7):747-758 (1975). Abstract only.
E. Hellman, “Exotic and Mundane Substrates for Gallium Nitride Heteroepitaxy,” Bell Laboratories/Lucent Technologies (no date given).
Sheldon, R.I., et al., “Cation Disorder and Vacancy Distribution in Nonstoichiometric Magnesium Aluminate Spinel, MgO .xA12O3,”J. Am Ceram. Soc. 82(12):3293-3298 (1999).
K.V. Yumashev, “Saturable absorber Co2+:MgA12O4crystal for Q switching of 1.34—μm Nd3+:YA1O3and 1.54-μm Er3+:glass lasers,”Applied Optics 38(30) :6343-6346 (1999).
T.E. Mitchell, “Dislocations and Mechanical Properties of MgO-A12O3Spinel Single Crystals,”J. Am. Ceram. Soc. 82(12):3305-3316 (1999).
Haisma, J., et al., “Lattice-Constant-Adaptable Crystallographics, ”Journal of Crystal Growth,102:979-993 (1990).
Tamura, K., et al., “Epitaxial Growth of ZnO Films on Lattice-Matched ScA1MgO4(0001) Substrates,”Journal of Crystal Growth,214-215:59-62 (2000).
Wyon, C., et al., “Czochralski Growth and Optical Properties of Magnesium-Aluminum Spinel Doped with Nickel,”Journal of Crystal Growth,79:710-713 (1986).
Kokta Milan R.
Ong Hung T.
Field, III Thomas G.
Jones Deborah
Saint-Gobain Ceramics & Plastics, Inc.
Sperty A B
Toler Larson & Abel, LLP
LandOfFree
Spinel substrate and heteroepitaxial growth of III-V... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Spinel substrate and heteroepitaxial growth of III-V..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spinel substrate and heteroepitaxial growth of III-V... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3374978