Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2005-05-31

2005-05-31

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S296000, C257S300000, C257S393000, C365S063000, C365S154000, C365S156000, C365S205000, C365S207000

Reexamination Certificate

active

06900513

ABSTRACT:
The present invention relates to a semiconductor memory device having a SRAM in which a memory cell comprises a pair of transmission transistors and a flip-flop circuit containing a pair of driver transistors and a pair of load transistors, wherein: a first conductive film interconnection formed from a first conductive film which is set on a semiconductor substrate, constitutes respective gate electrodes of said driver transistors, load transistors and transmission transistors; an inlaid interconnection set in a first insulating film lying on said semiconductor substrate, constitutes one of a pair of local interconnections cross-coupling a pair of input/output terminals in said flip-flop circuit; and a second conductive film interconnection formed from a second conductive film which is set on a second insulating film lying on said first insulating film, constitutes the other one of said pair of local interconnections.

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Japanese Office Action dated Sep. 15, 2004.

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