Method for growing single crystal of compound semiconductor...

Details Method for growing single crystal of compound semiconductor... Method for growing single crystal of compound semiconductor...

2005-04-12

2005-04-12

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

Reexamination Certificate

active

06878202

ABSTRACT:
A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of <100>+θ, wherein the offset angle θ is 2°≦θ≦55°.

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patent: 5871580 (1999-02-01), Asahi et al.
patent: 6703288 (2004-03-01), Nagasawa et al.
patent: 405221772 (1993-08-01), None
patent: 09-157093 (1997-06-01), None
patent: 11-27-021 (1999-10-01), None

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