Method for monitoring oxide quality

Details Method for monitoring oxide quality Method for monitoring oxide quality

2005-05-17

2005-05-17

Pert, Evan (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S762010

Reexamination Certificate

active

06894517

ABSTRACT:
The present invention utilizes to wafer acceptance testing equipment to fast monitor the quality of a tunnel oxide layer. First, a control gate and a floating gate in a memory cell are electrically connected. Then a plurality of swing time-dependent DC ramping voltages are applied and each corresponding gate leakage current is measured to calculate each corresponding β value. Finally a ratio of each β value is calculated and a β-gate voltage curve is plotted to actually simulate the device failure.

REFERENCES:
patent: 6583641 (2003-06-01), Wang et al.

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