Hetero-bipolar transistor

Details Hetero-bipolar transistor Hetero-bipolar transistor

2005-04-05

2005-04-05

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S191000, C257S192000, C257S194000, C257S195000, C257S198000, C257S201000, C257S184000, C257S187000

Reexamination Certificate

active

06876012

ABSTRACT:
The present invention provides a Hetero-Bipolar Transistor that suppresses a recombination current between electrons in the conduction band of an emitter and holes in the valence band of a base, which results on an enhancement of the current gain of the transistor. The HBT according to the present invention comprises a semi-insulating semiconductor substrate and a series of semiconductor layers on the substrate. The semiconductor layers are a buffer layer, a sub-collector layer a collector layer, a base layer, an emitter layer, an emitter contact layer, and an intermediate layer between the emitter layer and the emitter contact layer. The emitter layer has a carrier concentation of 1.0×1019cm−3.

REFERENCES:
patent: 4924283 (1990-05-01), Ohshima
patent: 4979009 (1990-12-01), Kusano et al.
patent: 5159424 (1992-10-01), Morishita
patent: 5177583 (1993-01-01), Endo et al.
patent: 5557117 (1996-09-01), Matsuoka et al.
patent: 5561306 (1996-10-01), Imamura et al.
patent: 5691546 (1997-11-01), Morishita
patent: 5952672 (1999-09-01), Kikkawa
patent: 6207976 (2001-03-01), Takahashi et al.
patent: 6384431 (2002-05-01), Takahashi et al.
patent: 2000299386 (2000-10-01), None
patent: 2003-007715 (2003-01-01), None
Japanese Office Action dated Feb. 19, 2004 with English-language translation.
Jingming Xu et al.,A Tunneling Emitter Bipolar Transistor, EEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986, pp. 416-418.
F.E. Najjar et al.,DC Characterization of the AlGaAs/GaAs Tunneling Emitter Bipolar Transistor, Applied Physics Letters, vol. 50 (26), Jun. 29, 1987, pp. 1915-1917.
A.F.J. Levi et al.,AlAs/GaAs Tunnel Emitter Bipolar Transistor, Applied Physics Letters, vol. 54 (22), May 29, 1989, pp. 2250-2252.
Copending U.S. Appl. No. 10/436,422, filed May 13, 2003.

Affiliated with

Also associated with

Rating

Hetero-bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hetero-bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hetero-bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3370849