Magnetoresistive effect element having a ferromagnetic...

Details Magnetoresistive effect element having a ferromagnetic... Magnetoresistive effect element having a ferromagnetic...

2005-04-12

2005-04-12

Evans, Jefferson (Department: 2652)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120

Reexamination Certificate

active

06879475

ABSTRACT:
A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.

REFERENCES:
patent: 5966012 (1999-10-01), Parkin
patent: 5966323 (1999-10-01), Chen et al.
patent: 6591479 (2003-07-01), Nakazawa et al.
patent: 6633461 (2003-10-01), Gill
patent: 6661626 (2003-12-01), Gill
patent: 20020036877 (2002-03-01), Sakakima et al.
U.S. Appl. No. 09/662,117, filed Sep. 14, 2000, pending.
U.S. Appl. No. 10/102,944, filed Mar. 22, 2002, pending.

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