Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-04-19
2005-04-19
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S298000, C250S3960ML, C250S3960ML, C250S492100, C250S492200, C250S492300
Reexamination Certificate
active
06881966
ABSTRACT:
A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.
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“Charged Particle Beams”, Acceleration and Transport of Neutralized Ion Beams, Stanley Humphries, Jr., 1990, pp. 528-534.
Benveniste Victor M.
Huang Yongzhang
Rathmell Robert D.
Axcelis Technologies Inc.
Eschweiler & Associates LLC
Lee John R.
Souw Bernard E.
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