Semiconductor device and its production method

Details Semiconductor device and its production method Semiconductor device and its production method

2005-04-05

2005-04-05

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S511000, C257S513000, C257S514000

Reexamination Certificate

active

06876055

ABSTRACT:
A semiconductor device having a two-layer well structure and a small margin required at the boundary of a well region and comprising a substrate-bias variable transistor and a DTMOS. Field effect transistors (223) are formed on a P-type shallow well region (212). The depth of a shallow device isolation region (214) on the P-type shallow well region (212) is less than the depth of the junction between an N-type deep well region (227) and the P-type shallow well region (212). Therefore the field effect transistors (223) share the P-type shallow well region (212). The P-type shallow well regions (212) independently of each other are easily formed since they are isolated from each other by a deep device isolation region (226) and the N-type deep well region (227).

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