End surface light-emitting element having increased external...

Details End surface light-emitting element having increased external... End surface light-emitting element having increased external...

2005-07-19

2005-07-19

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S083000, C257S084000, C257S115000, C257S119000, C257S091000, C257S107000, C257S099000, C257S745000

Reexamination Certificate

active

06919583

ABSTRACT:
An edge-emitting thyristor having an improved external luminous efficiency and a self-scanning light-emitting device array comprising the edge-emitting thyristor are disclosed. To improve the external luminous efficiency of an edge-emitting light-emitting thyristor, a structure where the current injected from an electrode concentrates on and near the edge of the light-emitting thyristor is adopted.

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K. Kusuda et al., Proposal of Self-Scanning Light Emitting Device (SLED), IEEE, Dec. 3, 1989, pp. 851-854.

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