Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-01-25
2005-01-25
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S459000
Reexamination Certificate
active
06846723
ABSTRACT:
A process of production of a semiconductor substrate having a semiconductor layer on an insulating film formed on a substrate. The process comprises the steps of forming a groove of a predetermined depth having a predetermined pattern in a first substrate made of a semiconductor, forming a first insulating film in the groove and above the first substrate, doping an impurity for peeling off the first substrate into a region of a predetermined depth of the first substrate, bonding a second substrate from above the first insulating film, removing the first substrate in the region with the impurity doped therein by heat treatment while leaving the semiconductor layer of the surface layer of the first substrate on the first insulating film, and polishing the semiconductor layer using as a stopper the surface of the first insulating film shaped projecting out at a bottom of the groove.
REFERENCES:
patent: 6346459 (2002-02-01), Usenko et al.
patent: 6352909 (2002-03-01), Usenko
patent: 6597039 (2003-07-01), Ohmi et al.
patent: 20010019877 (2001-09-01), Miyake et al.
Sonnenschein Nath & Rosenthal LLP
Wilson Allan R.
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