Elimination of implant damage during manufacture of HBT

Details Elimination of implant damage during manufacture of HBT Elimination of implant damage during manufacture of HBT

2005-01-25

2005-01-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S183000, C257S200000, C438S235000, C438S309000, C438S312000, C438S349000, C438S375000

Reexamination Certificate

active

06847061

ABSTRACT:
During the conventional manufacture of HBTs, implant damage occurs which leads to enhanced internal base diffusion. This problem has been overcome by making the base and base contact area from a single, uniformly doped layer of silicon-germanium. Instead of an ion implant step to selectively reduce the resistance of this layer away from the base, a layer of polysilicon is selectively deposited (using selective epi deposition) onto only that part. Additionally, the performance of the polysilicon emitter is enhanced by means a brief thermal anneal that drives a small amount of opposite doping type silicon into the SiGe base layer.

REFERENCES:
patent: 5846867 (1998-12-01), Gomi et al.
patent: 5897359 (1999-04-01), Cho et al.
patent: 6060365 (2000-05-01), Kim
patent: 6169007 (2001-01-01), Pinter
patent: 6506659 (2003-01-01), Zampardi et al.

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