Mode control of heterojunction injection lasers and method of fa

Details Mode control of heterojunction injection lasers and method of fa Mode control of heterojunction injection lasers and method of fa

1978-01-13

1980-01-22

Davie, James W.

Oscillators

Molecular or particle resonant type

148175, 350 9611, 357 18, H01S 319

Patent

active

041852567

ABSTRACT:
Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more heterostructure waveguiding layers that may be fabricated on the mesa formed substrate. As a result, the equivalent index of refraction for each waveguiding layer will be different. For longitudinal mode operation, a branching directional coupler can be directly fabricated during preferential LPE growth due to the presence of the mesa formed on the substrate. For fundamental transverse mode operation, oscillation can be restricted to a high gain region in a waveguiding layer due to the presence of the mesa and thickness variation and curvature in the active layer. Connected or juxtaposed stripe contact geometry can also be employed to provide a multicavity effect in a light waveguiding layer to enhance longitudinal mode selectivity.

REFERENCES:
patent: 3948583 (1976-04-01), Tien
patent: 3978426 (1976-08-01), Logan et al.
patent: 3993963 (1976-11-01), Logan et al.
F. K. Reinhart et al., "Monolithically Integrated AlGaAs Double Heterostructure Optical Components", Appl. Phys. Lett., vol. 25, No. 10, Nov. 15, 1974, pp. 623-624.
Y. Suematsu et al., "Axial-Mode Selectivities for Various Types of Integrated Twin-Guide Lasers", IEEE J. of Quantum Electronics, vol. QE-13, No. 8, Aug. 1977, pp. 619-622.
W. T. Tsang et al., "Lateral Current Confinement by Reverse-Biased Junctions in GaAs-Al.sub.x Ga.sub.1-x As DH Lasers", Appl. Phys. Lett., vol. 30, No. 10, May 15, 1977, pp. 538-540.

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