High-frequency semiconductor device

Details High-frequency semiconductor device High-frequency semiconductor device

2002-03-06

2004-11-30

Ho, Tan (Department: 2821)

Communications: radio wave antennas

Antennas

Microstrip

Reexamination Certificate

active

06825809

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a high-frequency semiconductor device, particularly to the patch antenna provided in an MMIC (Monolithic Microwave Integrated Circuit).
2. Related Prior Art
MMICs comprising high-speed semiconductor devices such as represented by HEMT (High Electron Mobiliy Transistor) or HBT (Hetero-Bipolar Transistor) are provided with an antenna for receiving and transmitting signals from/to the outside. Antenna called patch antenna is known as what is easy to intergrate with MMICs.
FIG. 1
is a see-through plan view for explaining a conventional patch antenna, and
FIG. 2
is a cross-sectional view taken on segment line A-A′ in FIG.
1
.
Referring to
FIGS. 1 and 2
, conventional patch antenna
100
has a structure comprising semiconductor substrate
1
provided with surface insulation film
2
protecting the surface thereof, antenna-ground plane
3
provided thereon, which is to be connected to the ground potential, and patch electrode
6
and antenna line
6
a
for supplying power to patch electrode
6
(or extracting power from patch electrode
6
), both formed on antena-ground plane
3
with interlayer insulation film
5
therebetween.
The conventional patch antenna described with reference to
FIGS. 1 and 2
can be formed from a planer metallization pattern, and easily integrated in an MMIC.
Patch electrode
6
corresponds to the feeding portion of the antenna, and its shape plays a substantial role in determining the characteristics of the antenna. However, it is necessary to connect antena line
6
a
to patch electrode
6
, and this results in that the effective patch electrode has a shape of combining the respective patterns of patch electrode
6
and antenna line
6
a
. Thus, the conventional patch antenna necessarily includes the pattern of antenna line
6
a
, and the antenna characteristics, for example, radiation pattern, deviate from the ideal values obtained from the design based on only patch antenna
6
.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide an MMIC having a patch antenna with improved antenna characteristics.
It is another object of the present invention to provide a method for increasing freedom in a patch antenna pattern design.
It is still another object of the present invention to provide a method for preventing patch electrode from the influence of antenna line
6
a.
FIG. 3
is a see-through plan view for explaining the essential concept of the presnt invention, and
FIG. 4
is a cross-sectional view taken on segment line A-A′ in FIG.
3
.
As shown in the drawings, antenna line
6
a
as the antenna connection portion is formed under antenna ground plane
3
, and is connected to the lower surface of patch electrode
6
via through-hole
7
.
According to the present invention, antenna line
6
a
is not formed on the top surface of interlayer insulation films
5
, and the pattern shape of patch electrode
6
can be free from antenna line
6
a
, and thus, the antenna characteristics can be improved.


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