Plasma apparatus

Details Plasma apparatus Plasma apparatus

1989-06-12

1991-05-28

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

427 39, 42218605, 20429819, 156345, C23C 1648

Patent

active

050191179

ABSTRACT:
The present invention relates to a plasma apparatus, in which a plasma is generated by the use of an electron cyclotron resonance, said plasma being introduced into a sample chamber where a sample is housed through a plasma outlet window by the use of a magnetic field for use in the electron cyclotron resonance, and said sample being subjected to a film-formation or an etching, characterized by that the distribution of magnetic flux density on a surface of the sample can be improved to uniform the plasma density, whereby subjecting the sample with the film-formation of uniformly thick or a uniform etching, by disposing a magnetic field forming means capable of forming a magnetic filed, wherein the magnetic flux density at the peripheral edge portion of the sample is higher than that at the central portion of the sample, on a side opposite to the plasma outlet window relatively to the sample.

REFERENCES:
patent: 4369205 (1985-01-01), Winterling
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4606802 (1986-08-01), Kobayashi
patent: 4865712 (1989-09-01), Mintz
Vossen Thin Film Processes, Academic Press, N.Y., 1978, pp. 131-136.

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