Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrat

Details Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrat Si-GaP-Si heterojunction bipolar transistor (HBT) on Si substrat

1989-10-05

1990-09-25

Hille, Rolf

357 61, 357 22, H01L 2972, H01L 29161, H01L 2980

Patent

active

049597027

ABSTRACT:
A heterojunction bipolar transistor (HBT) is provided having a silicon substrate in which a conventional junction base is formed. A coherently strained layer of semiconductor material having a wider band gap than silicon, such as gallium phosphide, is formed over the base to form a first portion of an emitter multilayer. A second portion of the emitter multilayer comprises silicon which can be epitaxially grown on the coherently strained layer. A thin heteropotential barrier is thus formed at the base-emitter junction which preferentially allows electrons to move from emitter to base while significantly reducing hole current from base to emitter, thereby improving emitter injection efficiency and current gain.

REFERENCES:
patent: 4617724 (1986-10-01), Yokoyama et al.
T. Katoda et al; "Heteroepitaxial Growth of Gallium Phosphide on Silicon", Journal of Electronic Materials, vol. 9, No. 4, 1980.
H. Kroemer, "Heterojunctions," JAP, J.A.P., vol. 20 (1981), Suppl. 20-1, pp. 9-13.

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