Static information storage and retrieval – Addressing – Sync/clocking
Reexamination Certificate
2003-10-07
2004-10-12
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Addressing
Sync/clocking
C365S189011, C365S189020, C365S230030
Reexamination Certificate
active
06804166
ABSTRACT:
BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
The invention relates to a method for operating a semiconductor memory at a double data transfer rate and to the semiconductor memory being operated at the double data transfer rate.
In order to operate a semiconductor memory at a double data transfer rate when reading and writing data, respectively, the respective access has hitherto been traced back to single transfer rate access (in this field of technology, the term “single data transfer rate” is also referred to as “single data rate or SDR”, while the term “double data transfer rate” is also referred to as “double data rate or DDR”). That is to say, an internal access operation with double the data length is effected at a single frequency, for example, when reading.
The first half of the internal data item is then output with the rising edge of a clock signal, while the second half of the internal data item is output with the falling edge of the clock signal. The sequence is reversed when writing. The input data item is collected at the rising and falling edges of the clock signal, is combined internally to form a data item of double the length and is subsequently written internally, with double the length, to the memory bank (the array).
This conventional method for operating a semiconductor memory at a double transfer rate has the disadvantage of inhomogeneous current consumption during a read or write access operation, respectively. Moreover, it is problematic that the memory bank has to supply double the amount of data.
U.S. Pat. No. 6,016,283 discloses a method for operating a semiconductor memory at a double data transfer rate and a corresponding semiconductor memory. A data item of a predetermined length is alternately written to two input buffers on rising and falling clock edges, respectively, in order to generate a data item of double the data length at the output. In this case, the clock signal is derived from an external clock signal, and the frequency of the external clock signals is doubled by clock shifting.
SUMMARY OF THE INVENTION
It is accordingly an object of the invention to provide a method for operating a semiconductor memory at a double data transfer rate and a semiconductor memory constructed for being operated at a double data transfer rate, which overcome the above-mentioned disadvantages of the prior art apparatus and methods of this general type.
In particular, it is an object of the invention to provide a method and a semiconductor memory of the type mentioned initially, with the result that a double data transfer rate is possible in a simple manner with a homogeneous current consumption and without additionally burdening the memory banks.
In the method in question and in the corresponding semiconductor memory, the invention enables the data read access and the write access to be shared between two memory banks. A first memory bank of which is operated with a clock that is shifted by half a clock pulse with respect to the operating clock of the other, second memory bank. Partial data streams are combined at the output of the two memory banks to form a data stream with double the frequency. The clock of the second memory bank is derived from the rising edge of an external clock signal during the read access and from the falling edge of the external clock signal during the write access, while the clock of the first memory bank is derived from the falling edge of the external clock signal during the read access and from the rising edge of the external clock signal during the write access.
In other words, the method and the semiconductor memory operate with half the data length at double the frequency, whereas the prior art operates with double the data length at single frequency.
As a result of sharing the access between two banks, the method and the semiconductor memory ensure a more homogeneous distribution of current during a read or write access operation. A further advantage of the invention is that, in contrast to the prior art, a single memory bank does not have to supply double the amount of data. Finally, an advantage of the method and of the semiconductor memory is that it is possible to use the same memory bank architecture as is used for SDR or single data transfer rate.
With the foregoing and other objects in view there is also provided, in accordance with the invention, a semiconductor memory. The semiconductor memory includes a first memory bank having an output for providing a partial data stream and a second memory bank having an output for providing a partial data stream. The semiconductor memory also includes a clock control unit and a multiplexer apparatus for sharing data read access and data write access between the first memory bank and the second memory bank. The partial data stream provided by the output of the first memory bank and the partial data stream provided by the output of the second memory bank are combined to form a data stream with a doubled frequency. The clock control unit is configured for obtaining an external clock signal. The clock control unit derives a clock for operating the first memory bank from a falling edge of the external clock signal during a read access and from a rising edge of the external clock signal during a write access. The clock control unit derives a clock for operating the second memory bank from the rising edge of the external clock signal during the read access and from the falling edge of the external clock signal during the write access. The clock for operating the first memory bank is shifted by half a clock pulse with respect to the clock for operating the second memory bank.
In accordance with an added feature of the invention, the multiplexer apparatus is constructed from a first multiplexer for combining the two partial data streams from the two memory banks to form the data stream during the read access, and a second multiplexer for dividing the data stream into the two partial data streams for the two memory banks during the write access. The two multiplexers are clocked by the clock signals of the two memory banks.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a method for operating a semiconductor memory at a double data transfer rate and a corresponding semiconductor memory, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
REFERENCES:
patent: 4849937 (1989-07-01), Yoshimoto
patent: 6016283 (2000-01-01), Jeong
patent: 6438066 (2002-08-01), Ooishi et al.
patent: 6487140 (2002-11-01), Tomaiuolo et al.
patent: 61066441 (1986-04-01), None
Haberland, M.: “Synchrone laufen schneller” [Synchrons Operate Faster],Elektronik, vol. 19, 1995, pp. 118, 119.
Kaiser Robert
Schamberger Florian
Schneider Helmut
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Nguyen Van Thu
Stemer Werner H.
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