Photon assisted sub-tunneling electrical probe, probe tip, and p

Details Photon assisted sub-tunneling electrical probe, probe tip, and p Photon assisted sub-tunneling electrical probe, probe tip, and p

1994-05-11

1996-04-16

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324751, 324753, 250306, G01R 31302

Patent

active

055086276

ABSTRACT:
An improved non-contact electrical measurement system, method, probe assembly, and probe tip. A probe tip having a photoemissive coating deposited thereon is provided and disposed substantially adjacent a measurement site of a test sample. The photoemissive coating of the probe tip is illuminated by a light source, and electrical measurements are made upon the probe tip to determine the electrical characteristics of the measurement site.

REFERENCES:
patent: 4837506 (1989-06-01), Patterson
patent: 5126660 (1992-06-01), Harrey et al.
patent: 5270643 (1993-12-01), Richardson
patent: 5436448 (1995-07-01), Hosaka et al.
Advanced Methods for Imaging Gate Oxide Defects with the Atomic Force Microscope (J. Colvin) ISTFA '92: Oct. 1992.
AFMs: What Will Their Role Be? Aug. 1993 "Semiconductor International".
Applications of Scanning Kelvin Probe Force Microscope (SKPFM) for Failure Analysis (O'Boyle, M. P.; Wickramasinghe, H. K.) ISTFA '92: Oct. 1992.

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