Photovoltaic element with a semiconductor layer comprising non-s

Details Photovoltaic element with a semiconductor layer comprising non-s Photovoltaic element with a semiconductor layer comprising non-s

1989-08-28

1990-09-25

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136260, 136264, 136265, 357 16, 357 30, 357 59, H01L 3106, H01L 310392, H01L 310368

Patent

active

049591061

ABSTRACT:
A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.

REFERENCES:
patent: 4596645 (1986-06-01), Stirn

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