Compound semiconductor devices

Details Compound semiconductor devices Compound semiconductor devices

1993-01-06

1996-04-16

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

055085350

ABSTRACT:
A field effect transistor includes a III-V compound semiconductor substrate having a surface, III-V compound semiconductor layers successively disposed on the surface, including, an InAlAs layer, an InP layer, and an InGaAs layer, a gate recess penetrating through the InGaAs layer and the InP layer, and a gate electrode in the gate recess in contact with the InAlAs layer. In this structure, the contact surface of the gate electrode with the InAlAs layer is coplanar with the interface between the InP layer and the InAlAs layer.

REFERENCES:
patent: 5172197 (1992-12-01), Nguyen et al.
patent: 5283448 (1994-02-01), Bayraktaroglu
patent: 5285087 (1994-02-01), Narita et al.
"A Recessed-Gate InAlAs
.sup.+ -InP HFET with an InP Etch Stop Layer"; Greenberg et al. IEEE Electron Device Letters, vol. 13, No. 3, Mar. 22, 1992, pp. 137-139.

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