Semiconductor thermally sensitive switch structure

Details Semiconductor thermally sensitive switch structure Semiconductor thermally sensitive switch structure

1976-08-12

1977-02-22

James, Andrew J.

Heat exchange

With valve or movable deflector for heat exchange fluid flow

With by-pass of heat exchanger or heat exchanger section

357 38, 165135, 338 22SD, 338 24, H01L 2356, H01L 2966, H01L 2974, B22D 100

Patent

active

040094820

ABSTRACT:
A thermally sensitive semiconductor switch structure has a nichrome strip vacuum evaporated and sintered in a zigzag pattern on a ceramic substrate and a silicon pellet disposed on the substrate through the nichrome strip and a glass layer. A thyristor is provided in the silicon pellet and is electrically insulated from the nichrome strip. The thyristor is adapted to be heated by a current flowing through the nichrome strip and to be turned on upon its reaching a predetermined temperature. When its temperature decreases below the predetermined magnitude, it is turned off.

REFERENCES:
patent: 3343004 (1967-09-01), Ovshinsky
patent: 3391728 (1968-07-01), Kelly
patent: 3417397 (1968-12-01), List et al.
patent: 3491596 (1970-01-01), Dean
patent: 3600650 (1971-08-01), Obenhaus
patent: 3614480 (1971-10-01), Berglund
patent: 3699403 (1972-10-01), Boleky
patent: 3806759 (1974-04-01), Kabaservice

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