Testing of semiconductor device and a fabrication process of...

Data processing: measuring – calibrating – or testing – Testing system – Including program set up

Reexamination Certificate

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C714S741000, C703S015000

Reexamination Certificate

active

06721676

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention generally relates to fabrication of semiconductor devices and more particularly to a testing of a semiconductor device during a fabrication process of the same and a test data processor used in such testing for creating test data.
With increase in the integration density, the magnitude of integrated circuits is increasing ever and ever. In such very large-scale integrated circuits, the testing for verifying proper operation of the integrated circuit becomes an important problem.
Conventionally, testing of integrated circuits has been made by using simulation data, which represents the expected functional operation of an integrated circuit produced by software simulation, wherein the simulation data is generally provided in the form of sampling data sampled in a time axis with a predetermined sampling interval. The simulation data thus sampled is then processed by a test data processor that converts the sampled simulation data thus obtained into test data suitable for use in actual testing of the integrated circuit. It should be noted that the testing of the integrated circuit is conducted by a tester device while using the test data which represents the result of the simulation in terms of operational cycles. Typically, the test data is produced by sampling the simulation data with a specific sampling interval having a period coincident with the interval of the operational cycle.
FIG.
1
and
FIGS. 2A-2D
represent a conventional example conducted by a test data processor for converting simulation data into test data, wherein
FIG. 1
represents the flowchart of the test data processor while
FIGS. 2A-2D
represent examples of event information and cycle information of the test data. It should be noted that the event information represents the timing of the simulation data, while the cycle information represents the event information for each cycle thus obtained by sampling the simulation data with the predetermined sampling interval.
Hereinafter, the process of verifying the operation of an integrated circuit
100
of
FIG. 2A
will be described with reference to the flowchart of FIG.
1
. In the example of
FIG. 2A
, the integrated circuit
100
has input terminals
101
and
102
and an output terminal
103
.
Referring to
FIG. 1
, a step S
100
is conducted first, in which the event (transition of state) is detected for the signals appearing on the input/output terminals
101
-
103
from the diagram of
FIG. 2B
, wherein
FIG. 2B
represents the state of the signals appearing at the input/output terminals
101
-
103
. It should be noted that the diagram of
FIG. 2B
is obtained as a result of the software simulation on the function of the integrated circuit
100
and indicates that the integrated circuit
100
produces an output signal on the output terminal
103
in response to input signals supplied to the input terminals
101
and
102
.
After the step S
100
, a step S
110
is conducted on the simulation data of
FIG. 2B
to extract therefrom test timing information represented in FIG.
2
D. It should be noted that the test timing information of
FIG. 2D
is necessary when sampling the event information included in the simulation data of
FIG. 2B
to produce the test data.
Referring to
FIG. 2D
, the test timing information includes: a timing number TNO used to discriminate a plurality of different test timing information from each other; cycle information CYCLE indicative of the sampling interval used for sampling the event information from the simulation data of
FIG. 2B
; and an event discriminator that represents the mode of signal transition for each of the signals appearing on the input terminals
101
and
102
and the output terminal
103
, wherein it should be noted that the event discriminator is used to discriminate the signal transition mode occurring in each sampling interval. For example, a representation such as NRZ or RZ may be used for the event discriminator, wherein NRZ represents the non-return-to-zero transition mode while RZ represents the return-to-zero transition mode. In the illustrated example, there is only one TNO, while there can be a number of different timing numbers TNO corresponding to different test timing information, wherein such different test timing information are used as a template for sampling the simulation data of
FIG. 2B
with respective, mutually different timings and sampling intervals or cycles.
After the step S
110
, the process proceeds to a step S
120
wherein the simulation data of
FIG. 2B
is sampled according to the test timing information of
FIG. 2D
for each TNO, and a step S
130
is conducted subsequently wherein test data represented in
FIG. 2C
is produced in the step S
130
from the simulation data sampled in the step S
120
. It should be noted that the test data contains therein, in addition to the timing number TNO, the logic state of the signals of the input and output terminals
101
-
103
at the foregoing sampling timing specified by the TNO.
In the illustrated example of
FIG. 2B
, it should be noted that there exists only one event timing occurring every 5 ns (nanoseconds), and thus, there is only one timing information (TNO=“1”) as represented in FIG.
2
D. As noted before, however, there can be a number of additional event timings corresponding to TNO of other than “1.”
The test data of
FIG. 2C
thus formed has been used by a tester device for the testing of the integrated circuit
100
.
However, the foregoing processing to form the test data by a sampling of the simulation data with a predetermined sampling interval or cycle has a drawback in that it is necessary to provide a number of different test timing information, such as the one represented in
FIG. 2D
with the TNO of “1,” in correspondence to the event information of the simulation data to be processed. It should be noted that such test timing information is used as a prior template when extracting the test data such as the one represented in
FIG. 2C
from the simulation data of FIG.
2
B. However, such a process of preparing different templates is complex and takes a substantial time. Thereby, the efficiency of fabrication of the integrated circuits, which includes such a testing process, is inevitably deteriorated.
Further, such a conventional testing process has required that the test data be formed based on exact test timing information in order to ensure that the sampling is made with proper timing. Otherwise, there may be oversight of events or offset in the timing of the events, and the processing of the test data back to the original simulation date may not be possible.
Further, the test data thus formed from the simulation data by sampling the simulation data tends to raise the problem of discrepancy in the accuracy between the simulation data and the tester device, as there is no adaptation made about the accuracy of between the simulation data and the testing conducted by the tester device. Thus, the test data may be unnecessarily accurate as compared with the test actually conducted by the tester device. Alternatively, there may be a case in which the accuracy of the test data may be too rough for the testing by the tester device. In the latter case, no satisfactory testing of the integrated circuit is possible.
Further, because of the lack of ability of verification of semiconductor operation in the case of uncertain events such as incoming of noise, the foregoing conventional process of forming the test data has a problem in that the verification of such uncertain events, which may require accuracy exceeding the accuracy of measurement of the tester device, is not possible.
Further, the conventional process of forming the test data suffers from the problem, when the cycle time used for testing the semiconductor device is too short, in that sufficient input/output dead band is not secured. It should be noted that such an input/output dead band is necessary for switching the state of the semiconductor device between an input state and an output state. Thereby, the tes

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