Fishing – trapping – and vermin destroying
Patent
1991-04-24
1993-02-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
430310, 208339, 208391, H01L 21312
Patent
active
051852969
ABSTRACT:
A method and apparatus for forming a dielectric thin film or pattern thereof is provided in which a positive or negative resist of a desired pattern if formed on various substrates including a semiconductor substrate by contact of the resist with a liquefied gas or super critical fluid of CO.sub.2, NH.sub.3 or the like. Alternatively, a thin film of an organic or inorganic compound dissolved or dispersed in an organic solvent which has been formed on substrate becomes substantially free of any organic matter or functional groups by contact with the liquefied gas or super critical fluid. Semiconductor devices of high performance and high reliability are ensured.
REFERENCES:
patent: 3988256 (1976-10-01), Vandermay et al.
patent: 4798740 (1989-01-01), Tomida et al.
patent: 4882107 (1989-11-01), Cavender et al.
patent: 4944837 (1990-07-01), Nishikawa et al.
S. Wolf et al, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Sunset Beach (1986) pp. 407-409, 431.
Kirk-Othmer Encyclopedia of Chemical Tech, Third Edition, vol.-supplement, New York, John Wiley & Sons pp. 872-893.
Translation of Matsuzaki et al, Japanese Patent No. 60-192333.
Ishihara Takeshi
Morita Kiyoyuki
Hearn Brian E.
Holtzman Laura M.
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Method for forming a dielectric thin film or its pattern of high does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a dielectric thin film or its pattern of high, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a dielectric thin film or its pattern of high will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-325493